digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3870-2n3873 silicon controlled rectifiers 2n3896-2n3899 revers e blocking triode thyristor 2N6171-2n6174 35 amps rms, 100-800 volts available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings (t c = 100c unless otherwise noted) rating symbol value unit peak repetitive forward or reverse blocking voltage (1) (t j = -40 to 100c, ? sine wave, 50-400 hz, gate open) 2n3870, 2n3896, 2N6171 2n3871, 2n3897, 2n6172 2n3872, 2n3898, 2n6173 2n3873, 2n3899, 2n6174 v rrm or v drm 100 200 400 600 volts peak non-repetitive forward or reverse blocking voltage (t 5ms) 2n3870, 2n3896, 2N6171 2n3871, 2n3897, 2n6172 2n3872, 2n3898, 2n6173 2n3873, 2n3899, 2n6174 v rsm or v dsm 150 330 660 700 volts average on-state current (2) (t c = -40 to 65c) (t c = 85c) i t(av) 22 11 amps peak non-repetitive surge current (one cycle, 60hz) (t c = 65c) i tsm 350 amps circuit fusing (t c = -40 to 100c) (t = 1 to 8.3 ms) i 2 t 510 a 2 s peak gate power p gm 20 watts average gate power p g(av) 0.5 watt peak forward gate current i gm 2 amps peak gate voltage v gm 10 volts operating junction temperature range t j -40 to 100 c storage temperature range t stg -40 to 150 c stud torque - 30 in. lb. thermal resistance, junction to case 2n3870 ? 2n3873, 2n3896-2n3899 2N6171-2n6174 r ? jc 0.9 1 c/w note 1: ratings apply for zero or negative gate voltage. devices shall not have a positive bias applied to the gate concurrentl y with a negative potential on the anode. devices should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied ex ceeds the rated blocking voltage. note 2: isolated stud devices must be derated an additional 10 percent. electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min. typ. max. unit peak forward or reverse blocking current (rated v drm or v rrm , gate open, t j = 100c) 2n3870, 2n3896, 2N6171 2n3871, 2n3897, 2n6172 2n3872, 2n3898, 2n6173 2n3873, 2n3899, 2n6174 rated v drm or v rrm , gate open, t j = 25c) all devices i drm , i rrm - - - - - 1 1 1 1 - 2.0 2.5 3.0 4.0 10 ma a sales@digit r oncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3870-2n3873 silicon controlled rectifiers 2n3896-2n3899 revers e blocking triode thyristor 2N6171-2n6174 35 amps rms, 100-800 volts electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min. typ. max. unit peak on-state voltage (i tm = 69a peak) v tm - 1.5 1.85 volts gate trigger current (continuous dc) v d = 12v, r l = 24ohms) t c = -40c t c = 25c i gt - - 9 4 80 40 ma gate trigger voltage (continuous dc) v d = 12v, r l = 24ohms) t c = -40c t c = 25c v gt - - 0.9 0.69 3 1.6 volts holding current (gate open) v d = 12v, i tm = 200ma) t c = -40c t c = 25c i h - - 14 5.2 90 50 ma gate controlled turn-on time (t d +t r ) ( i tm = 41adc, v d = rated v drm , i gt = 40madc, rise time 0.05s, pulse width = 10s) t gt - - 1.5 s circuit commutated turn-off time (i tm = 10a, i r = 10a) (i tm = 10a, i r = 10a, t c = 100c) t q - - 25 35 - - s forward voltage application rate (t c = 100c, v d = rated v drm ) dv/dt - 50 - v/s mechanical characteristics 2n3870-2n3873 case digi pf2 marking alpha-numeric pin out see below digi pf2 inches millimeters min max min max a 0.501 0.505 12.730 12.830 b 0.465 0.475 11.810 12.060 c 0.330 0.380 8.390 9.650 e 0.100 - 2.540 - f 0.035 0.085 0.890 2.160 h 0.148 0.174 3.750 4.410 j 0.080 0.097 2.040 2.460 k - 0.800 - 20.320 n - 0.510 - 12.950 q 0.065 0.160 1.650 4.060 sales@digit r oncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3870-2n3873 silicon controlled rectifiers 2n3896-2n3899 revers e blocking triode thyristor 2N6171-2n6174 35 amps rms, 100-800 volts 2n3896-2n3899 case to-48 marking alpha-numeric pin out see below to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 2N6171-2n6174 case to-48 iso marking alpha-numeric pin out see below to-48 iso inches millimeters min max min max a 0.551 0.559 14.000 14.200 b 0.501 0.505 12.730 12.830 c - 1.280 - 32.510 f - 0.160 - 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.300 0.350 7.620 8.890 l 0.255 0.275 6.480 6.990 q 0.055 0.085 1.400 2.160 t 0.135 0.150 3.430 3.810 sales@digit r oncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3870-2n3873 silicon controlled rectifiers 2n3896-2n3899 revers e blocking triode thyristor 2N6171-2n6174 35 amps rms, 100-800 volts . 2n3870-2n3873 silicon controlled rectifiers sales@digit r oncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n3896-2n3899 revers e blocking triode thyristor 2N6171-2n6174 35 amps rms, 100-800 volts sales@digit r oncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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